Original Publication Date
Journal of Applied Physics
DOI of Original Publication
Date of Submission
We have performed a systematic investigation of GaN/AlGaN quantum wells grown on different buffer layers (either GaN or AlGaN) in order to clarify the role of strain, structural parameters, and built-in field in determining the well-width dependence of the ground level emission energy. We find that identical quantum wells grown on different buffer layers exhibit strong variation of the ground level energy but similar well-width dependence. The data are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight binding model.
Bonfiglio, A., Lomascolo, M., Traetta, G., et al. Well-width dependence of the ground level emission of GaN/AlGaN quantum wells. Journal of Applied Physics 87, 2289 (2000). Copyright © 2000 AIP Publishing LLC.
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VCU Electrical and Computer Engineering Publications