Original Publication Date
Journal of Applied Physics
DOI of Original Publication
Date of Submission
The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8 K–300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells.
Rosales, D., Gil, B., & Bretagnon, T., et al. Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells. Journal of Applied Physics, 115, 073510 (2014). Copyright © 2014 AIP Publishing LLC.
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VCU Electrical and Computer Engineering Publications