Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Time-resolvedphotoluminescence(PL)spectroscopy was used to investigate carrier distributions in a GaN/AlGaN multiple quantum well(MQW) sample under high excitation intensities necessary to achieve lasing threshold. Room temperaturePL spectra showed optical transitions involving both confined and unconfined states in the quantum well structure. Analysis of the experimental results using a microscopic theory, indicates that at high excitation the carrier distributions are characterized by plasma temperatures which are significantly higher than the lattice temperature. The implications of our findings on GaN MQW laser design are also discussed.
Zeng, K.C., Mair, R., Lin, J.Y., et al. Plasma heating in highly excited GaN/AlGaN multiple quantum wells. Applied Physics Letters, 73, 2476 (1998). Copyright © 1998 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications