Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Room temperature photoreflectance investigations have been performed on a series of AlGaN layers grown both by metalorganic vapor phase epitaxy and molecular beam epitaxy on c-plane sapphire substrates. The aluminum composition was ranging between 0% and 20%, and was determined independently in the different growth laboratories, by various methods. It is found that within the experimental uncertainty, there is no detectable bowing parameter in these alloys. This contradicts some previous experimental investigations and confirms other ones.
Ochalski, T.J., Gil, B., Lefebvre, P., et al. Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN. Applied Physics Letters, 74, 3353 (1999). Copyright © 1999 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications