Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Photoelectrochemical (PEC)etching of p-type GaN has been realized in room temperature, 0.1 M KOH solutions. PECetching of GaN was achieved by applying a positive bias to the surface of the p-GaN layer through a deposited titanium mask. The applied bias reduces the field at the semiconductor surface, which induced the dissolution of the GaN. The effect of bias on etch rate and morphology was examined. It was found that insulating the Ti mask from the KOH solution with Si3N4 significantly increases the etch rate. The rms roughness of the etched region decreased as the bias voltage increased. Etch rates as high as 4.4 nm/min were recorded for films etched at 2 V.
Borton, J.E., Cai, C., Nathan, M.I., et al. Bias-assisted photoelectrochemical etching of p-GaN at 300 K. Applied Physics Letters, 77, 1227 (2000). Copyright © 2000 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications