Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects
Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
In15.7%Al84.3%N/AlN/GaN heterojunctionfield effect transistors have been electrically stressed under four different bias conditions: on-state-low-field stress, reverse-gate-bias stress, off-state-high-field stress, and on-state-high-field stress, in an effort to elaborate on hot electron/phonon and thermal effects. DC current and phase noise have been measured before and after the stress. The possible locations of the failures as well as their influence on the electrical properties have been identified. The reverse-gate-bias stress causes trap generation around the gate area near the surface which has indirect influence on the channel. The off-state-high-field stress and the on-state-high-field stress induce deterioration of the channel, reduce drain current and increase phase noise. The channel degradation is ascribed to the hot-electron and hot-phonon effects.
Zhu, C.Y., Wu, M., Kayis, C., et al. Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects. Applied Physics Letters, 101, 103502 (2012). Copyright © 2012 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Originally published at http://dx.doi.org/10.1063/1.4751037