Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Polarization-dependent free-carrier absorption (FCA) in bulk m-plane GaN at 1053 nm revealed approximately 6 times stronger hole-related absorption for E⊥c than for E||c probe polarization both at low and high carrier injection levels. In contrast, FCA at 527 nm was found isotropic at low injection levels due to electron resonant transitions between the upper and lower conduction bands, whereas the anisotropic impact of holes was present only at high injection levels by temporarily blocking electron transitions. Carrier transport was also found to be anisotropic under two-photon excitation, with a ratio of 1.17 for diffusivity perpendicular and parallel to the c-axis.
Ščajev, P., Jarašiūnas, K., Ozgur, U., et al. Anisotropy of free-carrier absorption and diffusivity in m-plane GaN. Applied Physics Letters, 100, 022112 (2012). Copyright © 2012 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications