Document Type

Article

Original Publication Date

2011

Journal/Book/Conference Title

Applied Physics Letter

Volume

99

Issue

6

DOI of Original Publication

10.1063/1.3624702

Comments

Originally published at http://dx.doi.org/10.1063/1.3624702

Date of Submission

April 2015

Abstract

Low-frequency noise technique was applied to analyze performance of nearly lattice-matched InAlN/AlN/GaN heterostructure field-effect transistors and their degradation caused by electrical stress. Nearly identical devices from the same wafer have undergone a 7 h DC electrical stress at a fixed DC drain bias of VDS = 20 V and different gate biases. We noted up to 32 dB/Hz higher low-frequency noise for stressed devices over the entire frequency range of 1 Hz-100 kHz. The measurements showed the minimum degradation at a gate-controlled two-dimensional electron gas density of 9.4 × 1012 cm−2. This result is in good agreement with the reported stress effect on drain-current degradation and current-gain-cutoff-frequency measurements and consistent with the ultrafast decay of hot-phonons due to the phonon–plasmon coupling.

Rights

Kayis, C., Ferreyra, R.A., Wu, M. Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects. Applied Physics Letters, 99, 063505 (2011). Copyright © 2011 AIP Publishing LLC.

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VCU Electrical and Computer Engineering Publications

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