Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV and a green luminescence (GL) band at about 2.43 eV. In contrast to epitaxial GaN samples prepared by both vapor-phase and molecular-beam epitaxy, the YL in the sample studied is weak and can be easily saturated. However, the GL is dominant. We attribute the GL to isolated defects involving galliumvacancies and the YL to the same defect, but bound to dislocations, or possibly to structuralsurface defects.
Reshchikov, M.A., Morkoç, H., Park, S.S., et al. Yellow and green luminescence in a freestanding GaN template. Applied Physics Letters, 78, 3041 (2001). Copyright © 2001 AIP Publishing LLC.
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VCU Electrical and Computer Engineering Publications