Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Photoluminescence(PL) studies were performed on a 1.5-μm-thick GaN layer grown by molecular-beam epitaxy on a freestanding GaN template that in turn was grown by hydride vapor-phase epitaxy.PL spectra from both the epilayer and the substrate contain a plethora of sharp peaks related to excitonic transitions. We identified the main peaks in the PL spectrum. Taking advantage of the observation of donor bound exciton peaks and their associated two-electron satellites, we have determined the binding energies of two distinct shallow donors (28.8 and 32.6 meV), which are attributed to Si and O, respectively.
Reshchikov, M.A., Huang, D., Yun, F., et al. Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template. Applied Physics Letters, 79, 3779 (2001). Copyright © 2001 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications