Giant photoresistivity and optically controlled switching in self-assembled nanowires

Authors

N. Kouklin, University of Nebraska-Lincoln
L. Menon, University of Nebraska-Lincoln
A. Z. Wong, University of Nebraska-Lincoln
D. W. Thompson, University of Nebraska-Lincoln
J. A. Woollam, University of Nebraska-Lincoln
P. F. Williams, University of Nebraska-Lincoln
Supriyo Bandyopadhyay, Virginia Commonwealth University, University of Nebraska-LincolnFollow

Document Type

Article

Original Publication Date

2001

Journal/Book/Conference Title

Applied Physics Letters

Volume

79

Issue

26

DOI of Original Publication

10.1063/1.1427156

Comments

Originally published at http://dx.doi.org/10.1063/1.1427156

Date of Submission

April 2015

Abstract

We report the observation of giant photoresistivity in electrochemically self-assembledCdS and ZnSenanowireselectrodeposited in a porous alumina film. The resistance of these nanowires increases by one to two orders of magnitude when exposed to infrared radiation, possibly because of real-space transfer of electrons from the nanowires into the surrounding alumina by photon absorption. This phenomenon has potential applications in “normally on” infrared photodetectors and optically controlled switches.

Rights

Kouklin, N., Menon, L., Wong, A.Z., et al. Giant photoresistivity and optically controlled switching in self-assembled nanowires. Applied Physics Letters, 79, 4423 (2001). Copyright © 2001 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications