Document Type
Article
Original Publication Date
2002
Journal/Book/Conference Title
Applied Physics Letters
Volume
80
Issue
2
DOI of Original Publication
10.1063/1.1432445
Date of Submission
April 2015
Abstract
The GaN films grown on buffer layers containing quantum dots by molecular beam epitaxy on sapphire substrates were investigated. The density of the dislocations in the films was determined by wet chemical etching and atomic force microscopy. It was found that the insertion of a set of multiple GaN quantum-dot layers in the buffer layer effectively reduces the density of the dislocations in the epitaxial layers. As compared to the dislocation density of ∼1010 cm−2in the typical GaN films grown on AlNbuffer layer, a density of ∼3×107 cm−2 was demonstrated in the GaN films grown with quantum dot layers.
Rights
Huang, D., Reshchikov, M.A., Yun, F., et al. Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy. Applied Physics Letters, 80, 216 (2002). Copyright © 2002 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1432445