Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Si-doped GaN layers grown by metal organic vapor phase epitaxy on m-plane GaN substrates were investigated by low-temperature cathodoluminescence (CL). We have observed stacking fault (SF) related emission in the range of 3.29–3.42 eV for samples with moderate doping, while for the layers with high concentration of dopants, no CL lines related to SFs have been noted. Perturbation of the SF potential profile by neighboring impurity atoms can explain localization ofexcitons at SFs, while this effect would vanish at high doping levels due to screening.
Khromov, S., Monemar, B., Avrutin, V., et al., Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN. Applied Physics Letters, 103, 192101 (2013). Copyright © 2013 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications