Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Stimulated emission (SE) and ultrafast carrier relaxation dynamics were measured in two AlxGa1−xN/GaNmultiple-quantum-well(MQW) structures, grown in a Ga-rich environment with x=0.2 and 0.3, respectively. The threshold density for SE (Ith≃100 μJ/cm2) was found to be independent of x. Room-temperature, time-resolved, differential transmission measurements mapped the carrier relaxation mechanisms for above barrier energy excitation. Photoexcited carriers are observed to relax into the QWs in <1 ps, while carrier recombination times as fast as 30 ps were measured. For excitation above Ith, SE is shown to deplete carriers in the barriers through a cascaded refilling of the QW state undergoing SE. Similar behavior is seen in an Al0.3Ga0.7N/GaNMQW grown with a N-rich atmosphere, but the relaxation phenomena of all AlGaN MQWs are significantly faster than observed in InGaN MQWs of similar structure.
Özgür,Ü., Everitt, H.O., He, L., et al. Stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells. Applied Physics Letters, 82, 4080 (2003). Copyright © 2003 AIP Publishing LLC.
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VCU Electrical and Computer Engineering Publications