Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
ZnO is considered as a promising substrate for GaNepitaxy because of stacking match and close lattice match to GaN. Traditionally, however, it suffered from poor surface preparation which hampered epitaxialgrowth in general and GaN in particular. In this work, ZnO substrates with atomically flat and terrace-like features were attained by annealing at high temperature in air. GaNepitaxial layers on such thermally treated basal plane ZnO with Zn and O polarity have been grown by molecular beam epitaxy, and two-dimensional growth mode was achieved as indicated by reflection high-energy electron diffraction. We observed well-resolved ZnO and GaN peaks in the high-resolution x-ray diffraction scans, with no Ga2ZnO4 phase detectable. Low-temperature photoluminescence results indicate that high-quality GaN can be achieved on both O- and Zn-face ZnO.
Gu, X., Reshchikov, M.A., Teke, A., et al. GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces. Applied Physics Letters, 84, 2268 (2004). Copyright © 2004 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications