Document Type
Article
Original Publication Date
2004
Journal/Book/Conference Title
Applied Physics Letters
Volume
84
Issue
16
DOI of Original Publication
10.1063/1.1703843
Date of Submission
April 2015
Abstract
The surface band bending, as well as the effect of plasma-induced damage on band bending, on GaN surfaces, was investigated. The upward band bending, measured by surface potentialelectric force microscopy (a variant of atomic force microscopy), for the as-grown n -type GaNwas about 1.0 eV which increased to ∼1.4 eV after reactive ion etching (RIE). UV illuminationdecreased the band bending by 0.3 eV with time constants on the order of seconds and hundreds of seconds for the as-grown and RIE treated GaN, respectively. This implies that there is a higher density of the surface states in the samples subjected to the RIE process. After the RIE treatment, the shape of the photoluminescence spectrum remained unchanged, but the intensity dropped by a factor of 3. This effect can be attributed to nonradiative defects created near the surface by the RIE treatment.
Rights
Cho, S.-J., Doğan, S., Sabuktagin, S., et al. Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy. Applied Physics Letters, 84, 3070 (2004). Copyright © 2004 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1703843