Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gateleakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths.Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges ofsurface steps.
Killat, N., Bajo, M. M., Paskova, T., et al., Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges. Applied Physics Letters, 103, 193507 (2013). Copyright © 2013 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications