Document Type


Original Publication Date


Journal/Book/Conference Title

Applied Physics Letters





DOI of Original Publication



Originally published at

Date of Submission

April 2015


We investigated the internal quantum efficiency (IQE) and the relative external quantum efficiency (EQE) of m-plane InGaN light emitting diodes(LEDs) grown on m-plane freestanding GaN emitting at ∼400 nm for current densities up to 2500 A/cm2. IQE values extracted from intensity and temperature dependent photoluminescencemeasurements were consistently higher, by some 30%, for the m-plane LEDs than for reference c-plane LEDs having the same structure, e.g., 80% versus 60% at an injected steady-state carrier concentration of 1.2×1018 cm−3. With increasing current injection up to 2500 A/cm2, the maximum EQE is nearly retained in m-plane LEDs, whereas c-plane LEDs exhibit approximately 25% droop. The negligible droop in m-plane LEDs is consistent with the reported enhanced hole carrier concentration and light holes in m-plane orientation, thereby enhanced hole transport throughout the active region, and lack of polarization induced field. A high quantum efficiency and in particular its retention at high injection levels bode well for m-plane LEDs as candidates for general lighting applications.


Li, X., Ni, X., Lee, J., et al. Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes. Applied Physics Letters, 95, 121107 (2009). Copyright © 2009 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications