Document Type

Article

Original Publication Date

2009

Journal/Book/Conference Title

Applied Physics Letters

Volume

95

Issue

10

DOI of Original Publication

10.1063/1.3224192

Comments

Originally published at http://dx.doi.org/10.1063/1.3224192

Date of Submission

April 2015

Abstract

We investigated internal quantum efficiency (IQE) of polar (0001) InGaN on c-sapphire, and (11¯00) nonpolar m-plane InGaN on both m-plane GaN and specially patterned Si. The IQE values were extracted from the resonant photoluminescence intensity versus the excitation power. Data indicate that at comparable generatedcarrier concentrations the efficiency of the m-plane InGaN on patterned Si is approximately a factor of 2 higher than that of the highly optimized c-plane layer. At the highest laser excitation employed (∼1.2×1018 cm−3), the IQE of m-plane InGaN double heterostructure on Si is approximately 65%. We believe that the m-plane would remain inherently advantageous, particularly at high electrical injection levels, even with respect to highly optimized c-plane varieties. The observations could be attributed to the lack of polarization induced field and the predicted increased optical matrix elements in m-plane orientation.

Rights

Ni, X., Lee, J., Wu, M., et al. Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN. Applied Physics Letters, 95, 101106 (2009). Copyright © 2009 AIP Publishing LLC.

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VCU Electrical and Computer Engineering Publications

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