Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
We investigated internal quantum efficiency (IQE) of polar (0001) InGaN on c-sapphire, and (11¯00) nonpolar m-plane InGaN on both m-plane GaN and specially patterned Si. The IQE values were extracted from the resonant photoluminescence intensity versus the excitation power. Data indicate that at comparable generatedcarrier concentrations the efficiency of the m-plane InGaN on patterned Si is approximately a factor of 2 higher than that of the highly optimized c-plane layer. At the highest laser excitation employed (∼1.2×1018 cm−3), the IQE of m-plane InGaN double heterostructure on Si is approximately 65%. We believe that the m-plane would remain inherently advantageous, particularly at high electrical injection levels, even with respect to highly optimized c-plane varieties. The observations could be attributed to the lack of polarization induced field and the predicted increased optical matrix elements in m-plane orientation.
Ni, X., Lee, J., Wu, M., et al. Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN. Applied Physics Letters, 95, 101106 (2009). Copyright © 2009 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications