Document Type

Article

Original Publication Date

2007

Journal/Book/Conference Title

Applied Physics Letters

Volume

91

Issue

18

DOI of Original Publication

10.1063/1.2805220

Comments

Originally published at http://dx.doi.org/10.1063/1.2805220

Date of Submission

April 2015

Abstract

Pb(Zr0.52Ti0.48)O3 films were deposited by rf magnetron sputtering on silicon-doped GaN(0001)∕c-sapphire with a PbTiO3∕PbO oxide bridge layer grown by molecular beam epitaxy. X-ray diffraction data showed the highly (111)-oriented perovskite phase in lead zirconate titanate(PZT) films with PbTiO3∕PbO bridge layers, compared to the pyrochlore phase grown directly on GaN. The in-plane epitaxial relationships were found from x-ray pole figures to be PZT[112¯]∥∥GaN[11¯00] and PZT[11¯0]∥∥GaN[112¯0]. The polarization-electric field measurements revealed the ferroelectric behavior with remanent polarization of 30–40μC/cm2 and asymmetric hysteresis loops due to the depletion layer formed in GaN under reverse bias which resulted in a high negative coercive electric field (950kV∕cm).

Rights

Xiao, B., Gu, X., Izyumskaya, N., et al. Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3∕PbO bridge layer. Applied Physics Letters, 91, 182908 (2007). Copyright © 2007 AIP Publishing LLC.

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VCU Electrical and Computer Engineering Publications

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