Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Pb(Zr0.52Ti0.48)O3 films were deposited by rf magnetron sputtering on silicon-doped GaN(0001)∕c-sapphire with a PbTiO3∕PbO oxide bridge layer grown by molecular beam epitaxy. X-ray diffraction data showed the highly (111)-oriented perovskite phase in lead zirconate titanate(PZT) films with PbTiO3∕PbO bridge layers, compared to the pyrochlore phase grown directly on GaN. The in-plane epitaxial relationships were found from x-ray pole figures to be PZT[112¯]∥∥GaN[11¯00] and PZT[11¯0]∥∥GaN[112¯0]. The polarization-electric field measurements revealed the ferroelectric behavior with remanent polarization of 30–40μC/cm2 and asymmetric hysteresis loops due to the depletion layer formed in GaN under reverse bias which resulted in a high negative coercive electric field (950kV∕cm).
Xiao, B., Gu, X., Izyumskaya, N., et al. Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3∕PbO bridge layer. Applied Physics Letters, 91, 182908 (2007). Copyright © 2007 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications