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Defense Date
2004
Document Type
Thesis
Degree Name
Master of Science
Department
Electrical Engineering
First Advisor
Dr. Hadis Morkoc
Abstract
This paper reviews the analytical strategy employed in conventional p-n junction. Then it goes through the analysis of magnetic p-n junction in the same strategy, which makes the review of magnetic p-n junction succinct. I-V equation of magnetic diode is the result of the p-n junction analysis. However, of great importance is to form an acceptable ohmic contact on magnetic diode, which is assumed to be ideal during the magnetic p-n junction analysis. The paper moves on to ohmic contact for magnetic diode, with the example of GaN based magnetic material. With the calculation of the shift of Fermi level in n-GaN with band splitting, conventional ohmic contact structure for n-GaN can be employed to magnetic n-GaN. Experiments from one group prove it. Ohmic contact optimization experiment on n-GaN is present. Ni/Au deposition on n-GaN shows an acceptable ohmic contact. The outlook part points out that the way for research on Schottky diode on magnetic material is partially paved by contents included in this paper.
Rights
© The Author
Is Part Of
VCU University Archives
Is Part Of
VCU Theses and Dissertations
Date of Submission
June 2008
VCU Only:
Off Campus Download
Comments
Part of Retrospective ETD Collection, restricted to VCU only.