Document Type

Conference Proceeding

Original Publication Date


Journal/Book/Conference Title

SPIE Proceedings, Gallium Nitride Materials and Devices X





DOI of Original Publication



Reshchikov, M.A., D.O. Demchenko, A. Usikov, H. Helana, Yu. Makarov. "Identification of Point Defects in HPVE-grown GaN by Steady-State and Time-Resolved Photoluminescence." Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630L (March 13, 2015); doi:10.1117/12.2077002

Copyright 2015 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Date of Submission

July 2016


We have investigated point defects in GaN grown by HVPE by using steady-state and time-resolved photoluminescence (PL). Among the most common PL bands in this material are the red luminescence band with a maximum at 1.8 eV and a zero-phonon line (ZPL) at 2.36 eV (attributed to an unknown acceptor having an energy level 1.130 eV above the valence band), the blue luminescence band with a maximum at 2.9 eV (attributed to ZnGa), and the ultraviolet luminescence band with the main peak at 3.27 eV (related to an unknown shallow acceptor). In GaN with the highest quality, the dominant defect-related PL band at high excitation intensity is the green luminescence band with a maximum at about 2.4 eV. We attribute this band to transitions of electrons from the conduction band to the 0/+ level of the isolated CN defect. The yellow luminescence (YL) band, related to transitions via the −/0 level of the same defect, has a maximum at 2.1 eV. Another yellow luminescence band, which has similar shape but peaks at about 2.2 eV, is observed in less pure GaN samples and is attributed to the CNON complex. In semi-insulating GaN, the GL2 band with a maximum at 2.35 eV (attributed to VN) and the BL2 band with a maximum at 3.0 eV and the ZPL at 3.33 eV (attributed to a defect complex involving hydrogen) are observed. We also conclude that the gallium vacancy-related defects act as centers of nonradiative recombination.


© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)

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