Document Type

Article

Original Publication Date

2015

Journal/Book/Conference Title

Journal of Electronic Materials

Volume

44

Issue

5

First Page

1281

Last Page

1286

DOI of Original Publication

10.1007/s11664-014-3540-4

Comments

The final publication is available at Springer via http://dx.doi.org/10.1007/s11664-014-3540-4

Date of Submission

July 2016

Abstract

Hydride vapor phase epitaxy (HVPE) is used for the growth of low-defect GaN. We have grown undoped films on sapphire and investigated them using steady-state and time-resolved photoluminescence (PL). One of the dominant PL bands in high-quality GaN grown by HVPE is the green luminescence (GL) band with a maximum at 2.4 eV. This PL band can be easily recognized in time-resolved PL measurements due to its exponential decay even at low temperatures (<50 K), with a characteristic lifetime of 1–2 μs. As the temperature increases from 70 K to 280 K, the PL lifetime for the GL band increases by an order of magnitude. This unusual phenomenon can be explained on the assumption that the electron-capture coefficient for the GL-related defect decreases with temperature as T −2.6.

Rights

© 2014 The Minerals, Metals & Materials Society

Is Part Of

VCU Forensic Science Publications

Included in

Physics Commons

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