LaF3 insulators for MIS structures

Authors

A. Sher, College of William and Mary
W. E. Miller, NASA-Langley Research Center
Y. H. Tsuo, College of William and Mary
John A. Moriarty, College of William and Mary
R. K. Crouch, NASA-Langley Research Center
B. A. Seiber, Virginia Commonwealth University

Document Type

Article

Original Publication Date

1979

Journal/Book/Conference Title

Applied Physics Letters

Volume

34

Issue

11

DOI of Original Publication

10.1063/1.90649

Comments

Originally published at http://dx.doi.org/10.1063/1.90649

Date of Submission

April 2015

Abstract

Thin films of Laf₃ deposited on Si or GaAs substrates have been observed to form blocking contacts with very high capacitances. This results in comparatively‐hysteresis‐free and sharpC‐V (capacitance‐voltage) characteristics for MIS structures. Such structures have been used to study the interface states of GaAs with increased resolution and to construct improved photocapacitive infrared detectors.

Rights

Sher, A., Miller, W.E., Tsuo, Y.H., et al. LaF3 insulators for MIS structures. Applied Physics Letters, 34, 799 (1979). Copyright © 1979 AIP Publishing LLC.

Is Part Of

VCU Physics Publications