Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Gallium (Ga) surfacedesorption behavior was investigated using reflection high-energy electron diffraction during the GaNgrowth. It was found that the desorption of Ga atoms from the (0001) GaNsurfaces under different III-V ratio dependents on the coverage of adsorbed atoms. Doing so led to desorption energies of 2.76 eV for Ga droplets, 1.24–1.89 eV for Ga under Ga-rich growth conditions, and 0.82 eV – 0.94 eV for Ga under stoichiometric growth conditions. Moreover, the variation of the GaNsurface morphology under different III-V ratios on porous templates supports the conclusion that Ga desorption energy depends on the coverage, and the III/V ratio dominates the growth mode.
He, L., Moon, Y.-T., Xie, J., et al. Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy. Applied Physics Letters, 88, 071901 (2006). Copyright © 2006 AIP Publishing LLC.
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VCU Electrical and Computer Engineering Publications