Document Type

Article

Original Publication Date

2006

Journal/Book/Conference Title

Applied Physics Letters

Volume

89

Issue

12

DOI of Original Publication

10.1063/1.2354016

Comments

Originally published at http://dx.doi.org/10.1063/1.2354016

Date of Submission

April 2015

Abstract

Single crystalline PbTiO3films have been epitaxially grown on SrTiO3 (001) substrates by molecular beam epitaxy using H2O2 as the source of active oxygen. The optimum growth conditions have been determined by analyzing a range of growth parameters affecting growth and used to attain single phase and stoichiometric PbTiO3thin films.In situ reflection high-energy electron diffraction pattern indicated the PbTiO3films to be grown under a two-dimensional growth mode. The full width at half maximum of the rocking curve of a relatively thin65nm (001) PbTiO3film is 6.2arcmin which is indicative of high crystal quality. The band gap of PbTiO3, as determined by ellipsometric measurement, is 3.778eV.

Rights

Gu, X., Izyumskaya, N., Avrutin, V., et al. High quality epitaxial growth of PbTiO3 by molecular beam epitaxy using H2O2 as the oxygen source. Applied Physics Letters, 89, 122912 (2006). Copyright © 2006 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications

Download

Share

COinS