Document Type
Article
Original Publication Date
1998
Journal/Book/Conference Title
Applied Physics Letters
Volume
72
Issue
10
DOI of Original Publication
10.1063/1.121016
Date of Submission
April 2015
Abstract
Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energiesE1=0.234±0.006, E2=0.578±0.006, E3=0.657±0.031, E4=0.961±0.026, and E5=0.240±0.012 eV. Among these, the levels labeled E1, E2, and E3are interpreted as corresponding to deep levels previously reported in n-GaN grown by both hydride vapor-phase epitaxy and metal organic chemical vapor deposition. Levels E4 and E5do not correspond to any previously reported defect levels, and are characterized for the first time in our studies.
Rights
Wang, C.D., Yu, L.S., Lau, S.S., et al. Deep level defects in n-type GaN grown by molecular beam epitaxy. Applied Physics Letters, 72, 1211 (1998). Copyright © 1998 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.121016