Plasma heating in highly excited GaN/AlGaN multiple quantum wells

Authors

K. C. Zeng, Kansas State University
R. Mair, Kansas State University
J. Y. Lin, Kansas State University
H. X. Jiang, Kansas State University
W. W. Chow, Sandia National Laboratories
A. Botchkarev, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

1998

Journal/Book/Conference Title

Applied Physics Letters

Volume

73

Issue

17

DOI of Original Publication

10.1063/1.122487

Comments

Originally published at http://dx.doi.org/10.1063/1.122487

Date of Submission

April 2015

Abstract

Time-resolvedphotoluminescence(PL)spectroscopy was used to investigate carrier distributions in a GaN/AlGaN multiple quantum well(MQW) sample under high excitation intensities necessary to achieve lasing threshold. Room temperaturePL spectra showed optical transitions involving both confined and unconfined states in the quantum well structure. Analysis of the experimental results using a microscopic theory, indicates that at high excitation the carrier distributions are characterized by plasma temperatures which are significantly higher than the lattice temperature. The implications of our findings on GaN MQW laser design are also discussed.

Rights

Zeng, K.C., Mair, R., Lin, J.Y., et al. Plasma heating in highly excited GaN/AlGaN multiple quantum wells. Applied Physics Letters, 73, 2476 (1998). Copyright © 1998 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications