Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects

Authors

C. Kayis, Virginia Commonwealth UniversityFollow
Romualdo A. Ferreyra, Virginia Commonwealth UniversityFollow
M. Wu, Virginia Commonwealth University
X. Li, Virginia Commonwealth University
Ü. Özgür, Virginia Commonwealth UniversityFollow
A. Matulionis, Semiconductor Physics Institute of Center for Physical Science and Technology
Hadis Morkoç, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

2011

Journal/Book/Conference Title

Applied Physics Letter

Volume

99

Issue

6

DOI of Original Publication

10.1063/1.3624702

Comments

Originally published at http://dx.doi.org/10.1063/1.3624702

Date of Submission

April 2015

Abstract

Low-frequency noise technique was applied to analyze performance of nearly lattice-matched InAlN/AlN/GaN heterostructure field-effect transistors and their degradation caused by electrical stress. Nearly identical devices from the same wafer have undergone a 7 h DC electrical stress at a fixed DC drain bias of V_DS = 20 V and different gate biases. We noted up to 32 dB/Hz higher low-frequency noise for stressed devices over the entire frequency range of 1 Hz-100 kHz. The measurements showed the minimum degradation at a gate-controlled two-dimensional electron gas density of 9.4 × 10¹² cm⁻². This result is in good agreement with the reported stress effect on drain-current degradation and current-gain-cutoff-frequency measurements and consistent with the ultrafast decay of hot-phonons due to the phonon–plasmon coupling.

Rights

Kayis, C., Ferreyra, R.A., Wu, M. Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects. Applied Physics Letters, 99, 063505 (2011). Copyright © 2011 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications