Document Type
Article
Original Publication Date
2011
Journal/Book/Conference Title
Applied Physics Letters
Volume
99
DOI of Original Publication
https://doi.org/10.1063/1.3625426
Date of Submission
March 2018
Abstract
Charge storage characteristics of ultra-small Pt nanoparticle embedded devices were characterized by capacitance-voltage measurements. A unique tilt target sputtering configuration was employed to produce highly homogenous nanoparticle arrays. Pt nanoparticle devices with sizes ranging from ∼0.7 to 1.34 nm and particle densities of ∼3.3–5.9 × 1012 cm−2 were embedded between atomic layer deposited and e-beam evaporated tunneling and blocking Al2O3 layers. These GaAs-based non-volatile memory devices demonstrate maximum memory windows equivalent to 6.5 V. Retention characteristics show that over 80% charged electrons were retained after 105 s, which is promising for device applications.
Is Part Of
VCU Electrical and Computer Engineering Publications
