Document Type
Article
Original Publication Date
2001
Journal/Book/Conference Title
Applied Physics Letters
Volume
78
Issue
16
DOI of Original Publication
10.1063/1.1359779
Date of Submission
April 2015
Abstract
A free-standing GaN template grown by hydride vapor phase epitaxy has been characterized by transmission electron microscopy(TEM). The TEM investigation was augmented by x-ray diffraction, defect delineation etching process followed by imaging with atomic force microscopy and variable temperature photoluminescence. The density of dislocations near the N face was determined to be, in order, 3±1×107, 4±1×107, and about 1×107 cm−2 by cross-sectional TEM, plan-view TEM, and a defect revealing etch, respectively. The same methods on the Ga face revealed the defect concentration to be, in order, less than 1×107 cm−2 by plan-view TEM, less than 5×106 cm−2 by cross-sectional TEM, and 5×105 cm−2 by defect revealing hot H3PO4acid, respectively. The full width at half maximum of the symmetric (0002) x-ray diffraction peak was 69 and 160 arc sec for the Ga and N faces, respectively. That for the asymmetric (101_4) peak was 103 and 140 arc sec for Ga and N faces, respectively. The donor bound exciton linewidth was about 1 meV each at 10 K, and a green band centered at about 2.44 eV was observed.
Rights
Jasinski, J., Swider, W., Liliental-Weber, Z., et al. Characterization of free-standing hydride vapor phase epitaxy GaN. Applied Physics Letters, 78, 2297 (2001). Copyright © 2001 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1359779