Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

Authors

D. Huang, Virginia Commonwealth University
P. Visconti, Virginia Commonwealth University
K. M. Jones, Virginia Commonwealth University
Michael A. Reshchikov, Virginia Commonwealth UniversityFollow
F. Yun, Virginia Commonwealth University
A. A. Baski, Virginia Commonwealth UniversityFollow
T. King, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

2001

Journal/Book/Conference Title

Applied Physics Letters

Volume

78

Issue

26

DOI of Original Publication

10.1063/1.1380399

Comments

Originally published at http://dx.doi.org/10.1063/1.1380399

Date of Submission

April 2015

Abstract

The polarity of GaNfilmsgrown using GaN and AlNbuffer layers on sapphire substrates by molecular beam epitaxy were investigated by atomic force microscopy, hot wet chemical etching, and reflection high-energy electron diffraction. We found that the GaNfilmsgrown on high temperature AlN (>890 °C) and GaN (770–900 °C) buffer layers invariably show Ga and N polarity, respectively. However, the filmsgrown using low temperature (∼500 °C) buffer layers, either GaN or AlN, could have either Ga or N polarity, depending on the growth rate of the buffer layer.

Rights

Huang, D., Visconti, P., Jones, K.M., et al. Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy. Applied Physics Letters, 78, 4145 (2001). Copyright © 2001 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications