Document Type
Article
Original Publication Date
2001
Journal/Book/Conference Title
Applied Physics Letters
Volume
78
Issue
15
DOI of Original Publication
10.1063/1.1361273
Date of Submission
April 2015
Abstract
Schottky barrierdiodes, on both Ga and N faces of a ∼300-μm-thick free-standing GaN layer, grown by hydride vapor phase epitaxy(HVPE) on Al2O3 followed by laser separation, were studied by capacitance–voltage and deep level transient spectroscopy(DLTS) measurements. From a 1/C2 vs V analysis, the barrier heights of Ni/Au Schottky contacts were determined to be different for the two polar faces: 1.27 eV for the Ga face, and 0.75 eV for the N face. In addition to the four common DLTS traps observed previously in other epitaxial GaN including HVPE-grown GaN a new trap B′ with activation energyET=0.53 eV was found in the Ga-face sample. Also, trap E1 (ET=0.18 eV), believed to be related to the N vacancy, was found in the N-face sample, and trap C (ET=0.35 eV) was in the Ga-face sample. Trap C may have arisen from reactive-ion-etching damage.
Rights
Fang, Z.-Q., Look, D.C., Visconti, P., et al. Deep centers in a free-standing GaN layer. Applied Physics Letters, 78, 2178 (2001). Copyright © 2001 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1361273