Document Type
Article
Original Publication Date
2010
Journal/Book/Conference Title
Applied Physics Letters
Volume
97
Issue
3
DOI of Original Publication
10.1063/1.3465658
Date of Submission
April 2015
Abstract
Ballistic and quasiballistic electron transport across the active InGaN layer are shown to be responsible for electron overflow and electroluminescence efficiency droop at high current levels in InGaN light emitting diodes both experimentally and by first-order calculations. An InGaN staircase electron injector with step-like increased In composition, an “electron cooler,” is proposed for an enhanced thermalization of the injected hot electrons to reduce the overflow and mitigate the efficiency droop. The experimental data show that the staircase electron injector results in essentially the same electroluminescence performance for the diodes with and without an electron blocking layer, confirming substantial electron thermalization. On the other hand, if no InGaN staircase electron injector is employed, the diodes without the electron blocking layer have shown significantly lower (three to five times) electroluminescence intensity than the diodes with the blocking layer. These results demonstrate a feasible method for the elimination of electron overflow across the active region, and therefore, the efficiency droop in InGaN light emitting diodes.
Rights
Ni, X., Li, X., Lee, J., et al. InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes. Applied Physics Letters, 97, 031110 (2010). Copyright © 2010 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.3465658