Document Type
Article
Original Publication Date
2010
Journal/Book/Conference Title
Journal of Applied Physics
Volume
107
Issue
1
DOI of Original Publication
10.1063/1.3275241
Date of Submission
October 2015
Abstract
The microstructure of AuNiAlTi/Al0.84In0.16N/AlN/GaNOhmic contacts annealed from 700 to 900 °C has been determined using transmission electron microscopy and associated analytical techniques. Intermixing and phase separation of the metal contact layers was observed to degrade the surface roughness. An optimal contact performance was obtained for contacts annealed at 800 °C and was attributed to the formation of TiN contact inclusions that had penetrated through the AlInN layers into the GaN layers underneath. These TiN contact inclusions had an inverted mushroom shape with a density of ∼108 cm−2, and they were invariably located at the positions of mixed-type threading dislocations. These inclusion defects would act as a conduction path between the metal contacts and the two-dimensional electron gas of heterojunction field-effect transistor devices. The AlInN layer remained intact in dislocation-free areas of all samples.
Rights
Zhou, L., Leach, J. H., & Ni, X., et al. Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors. Journal of Applied Physics, 107, 014508 (2010). Copyright © 2010 American Institute of Physics.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.3275241