Document Type
Article
Original Publication Date
2013
Journal/Book/Conference Title
Applied Physics Letters
Volume
103
Issue
5
DOI of Original Publication
10.1063/1.4817387
Date of Submission
March 2015
Abstract
Effect of two-layer (In0.04Ga0.96N and In0.08Ga0.92N) staircase electron injector (SEI) on quantum efficiency of light-emitting-diodes (LEDs) in the context of active regions composed of single and quad 3 nm double heterostructures (DHs) is reported. The experiments were augmented with the first order model calculations of electron overflow percentile. Increasing the two-layer SEI thickness from 4 + 4 nm up to 20 + 20 nm substantially reduced, if not totally eliminated, the electron overflow in single DH LEDs at low injections without degrading the material quality evidenced by the high optical efficiency observed at 15K and room temperature. The improvement in quad 3 nm DH LEDs with increasing SEI thickness is not so pronounced as the influence of SEI is less for thicker active regions, which in and of themselves necessarily thermalize the carriers. (C) 2013 AIP Publishing LLC.
Rights
Zhang, F., Li, X., Hafiz, S., et al. The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes. Applied Physics Letters, 103, 051122 (2013). Copyright © 2013 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.4817387