Document Type

Article

Original Publication Date

2013

Journal/Book/Conference Title

Journal of Vacuum Science & Technology A

Volume

31

DOI of Original Publication

10.1116/1.4828357

Comments

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.

The following article appeared in Journal of Vacuum Science & Technology A 31, 06F109 (2013); doi: http://dx.doi.org/10.1116/1.4828357

Date of Submission

July 2018

Abstract

The authors have studied the impact of epilayer strain on the deposition of InAs/GaAs on (100) and (111)B with 2 degrees offset toward 2-1-1 surfaces. Consequences of a 7% lattice mismatch between these orientations in the form of three-dimensional growth are less apparent for (111)B with 2 degrees offset toward 2-1-1 surfaces compared to (100). By exploring a range of molecular beam epitaxy process parameters for InAs/GaAs growth and utilizing scanning electron microscopy, atomic force microscopy, and Raman spectroscopy to evaluate the quality of these strained layers, the authors develop empirical models that describe the influence of the process conditions in regards to surface roughness with >92% accuracy. The smoothest InAs/GaAs samples demonstrated average surface roughness of 0.08 nm for 10 um-squre areas, albeit at very low deposition rates. The authors have found the most important process conditions to be substrate temperature and deposition rate, leading us to believe that controlling diffusion length may be the key to reducing defects in severely strained structures. InGaAs/AlGaAs quantum cascade laser structures were also produced on (111)B with 2 degrees offset toward 2-1-1 to take advantage of the piezoelectric effect, and the modified laser transitions due to these effects were observed.

Rights

© 2013 American Vacuum Society

Is Part Of

VCU Electrical and Computer Engineering Publications

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