Document Type
Conference Proceeding
Original Publication Date
2013
Journal/Book/Conference Title
SPIE Micro+Nano Materials, Devices, and Applications
Volume
8923
DOI of Original Publication
10.1117/12.2034334
Date of Submission
July 2018
Abstract
This study focuses on the influence of epi-layer strain and piezoelectric effects in asymmetric GaInAs/GaAlAs action regions that potentially lead to intra-cavity frequency mixing. The theoretical limits for conduction and valence band offsets in lattice-matched semiconductor structures have resulted in the deployment of non-traditional approaches such as strain compensation to extend wavelength in intersubband devices, where strain limits are related to misfit dislocation generation. Strain and piezoelectric effects have been studied and verified using select photonic device designs. Metrics under this effort also included dipole strength, oscillator strength, and offset of energy transitions, which are strongly correlated with induced piezoelectric effects. Unique photonic designs were simulated, modeled, and then fabricated using solid-source molecular beam epitaxy into photonic devices. The initial designs produce "lambda" wavelength, and the introduction of the piezoelectric effect resulted in "lambda/2" wavelength. More importantly, this work demonstrates that the theoretical cutoff wavelength in intersubband lasers can be overcome.
Rights
Copyright 2013 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Is Part Of
VCU Electrical and Computer Engineering Publications
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Semiconductor and Optical Materials Commons
Comments
Originally published in Proceedings of SPIE. Gregory E. Triplett, “Extending device performance in photonic devices using piezoelectric properties," Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 892324 (7 December 2013). DOI: http://dx.doi.org/10.1117/12.2034334