Document Type
Article
Original Publication Date
2007
Journal/Book/Conference Title
Applied Physics Letters
Volume
91
Issue
2
DOI of Original Publication
10.1063/1.2753719
Date of Submission
April 2015
Abstract
Molecular beam epitaxial growth of ZrO2 has been achieved on GaN(0001)∕c-Al2O3substrates employing a reactive H2O2 oxygen source. A low temperature buffer followed by in situ annealing and high temperature growth has been employed to attain monoclinic, (100)-oriented ZrO2thin films. The typical full width at half maximum of a 30-nm-thick ZrO2 (100) film rocking curves is 0.4arcdeg and the root-mean-square surface roughness is ∼4Å. ω−2θand pole figure x-ray diffraction patterns confirm the monoclinic structure of ZrO2. Data support an in-plane epitaxial relationship of ZrO2 [010]∥∥GaN[112¯] and ZrO2 [001]∥∥GaN[11¯00]. X-ray diffraction and reflection high-energy electron diffraction analyses reveal in-plane compressive strain, which is mainly due to the lattice mismatch.
Rights
Gu, X., Izyumskaya, N., Avrutin, V., et al. Epitaxial growth of ZrO2 on GaN templates by oxide molecular beam epitaxy. Applied Physics Letters, 91, 022916 (2007). Copyright © 2007 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.2753719