Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy

Authors

N. Izyumskaya, Virginia Commonwealth UniversityFollow
Vitaliy Avrutin, Virginia Commonwealth UniversityFollow
X. Gu, Virginia Commonwealth University
B. Xiao, Virginia Commonwealth University
Serguei A. Chevtchenko, Virginia Commonwealth University
J-G Yoon, Virginia Commonwealth University, University of Suwon
Hadis Morkoç, Virginia Commonwealth UniversityFollow
Lin Zhou, Arizona State University at the Tempe Campus
David J. Smith, Arizona State University at the Tempe Campus

Document Type

Article

Original Publication Date

2007

Journal/Book/Conference Title

Applied Physics Letters

Volume

91

Issue

18

DOI of Original Publication

10.1063/1.2804571

Comments

Originally published at http://dx.doi.org/10.1063/1.2804571

Date of Submission

April 2015

Abstract

Single-crystal, single-phase Pb(ZrxTi1−x)O3 films (x=0–0.4) were grown on (001)SrTiO3 and SrTiO3:Nb substrates by molecular beam epitaxy. Layer-by-layer growth of thePb(Zr,Ti)O3 films was achieved by using PbTiO3 buffer layers between the SrTiO3substrates and the Pb(Zr,Ti)O3 films. The layers with low Zr content showed high crystallinity with full width at half maximum of ω -rocking curves as low as 4arcmin , whereas increase in Zr concentration led to pronounced angular broadening. The PbZr0.07Ti0.93O3 filmsexhibited remanent polarization as high as 83μC/cm2 , but local areas suffered from nonuniform leakage current.

Rights

Izyumskaya, N., Avrutin, V., Gu, X., et al. Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy. Applied Physics Letters, 91, 182906 (2007). Copyright © 2007 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications