Document Type
Article
Original Publication Date
2007
Journal/Book/Conference Title
Applied Physics Letters
Volume
91
Issue
2
DOI of Original Publication
10.1063/1.2756168
Date of Submission
April 2015
Abstract
Single crystalline PbTiO3, PbZrO3, and PbZr0.57Ti0.43O3 thin films on SrTiO3 (001) substrates were grown by a combination of molecular beam epitaxy and rf sputtering methods. The authors measured the dielectric functions of the thin films using spectroscopic ellipsometry and determined the interband critical point energies using standard critical point model. They compared the critical point energies to the band structure calculations in the literature. The data suggest that anticrossing behavior occurs between Ea and Eb near Zr=0.17. This phenomenon is attributed to a coupling between X1c and X3c bands caused by intrinsic alloy disorder.
Rights
Kang, T.D., Lee, H., Xing, G., et al. Dielectric functions and critical points of PbTiO3, PbZrO3, and PbZr0.57Ti0.43O3 grown on SrTiO3 substrate. Applied Physics Letters, 91, 022918 (2007). Copyright © 2007 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.2756168