Defense Date

2004

Document Type

Thesis

Degree Name

Master of Science

Department

Electrical Engineering

First Advisor

Dr. Hadis Morkoc

Abstract

As a wide band semiconductor with a large binding energy (about 60meV), ZnO is a promising candidate semiconductor material for the next generation of optoelectronic , light emission or high power and high frequency devices. In order to make electrical device from ZnO, it is necessary to investigate optical properties of ZnO.In this thesis, PL setup and the properties of ZnO are introduced briefly and the optical properties of ZnO are investigated in detail. Temperature dependence of PL spectra of ZnO are measured and analyzed. Sharp emission line of PL spectra of rare earth (RE) doped ZnO are also investigated.

Rights

© The Author

Is Part Of

VCU University Archives

Is Part Of

VCU Theses and Dissertations

Date of Submission

June 2008