DOI
https://doi.org/10.25772/CVA7-GJ22
Defense Date
2004
Document Type
Thesis
Degree Name
Master of Science
Department
Electrical Engineering
First Advisor
Dr. Hadis Morkoc
Abstract
As a wide band semiconductor with a large binding energy (about 60meV), ZnO is a promising candidate semiconductor material for the next generation of optoelectronic , light emission or high power and high frequency devices. In order to make electrical device from ZnO, it is necessary to investigate optical properties of ZnO.In this thesis, PL setup and the properties of ZnO are introduced briefly and the optical properties of ZnO are investigated in detail. Temperature dependence of PL spectra of ZnO are measured and analyzed. Sharp emission line of PL spectra of rare earth (RE) doped ZnO are also investigated.
Rights
© The Author
Is Part Of
VCU University Archives
Is Part Of
VCU Theses and Dissertations
Date of Submission
June 2008