Defense Date

2004

Document Type

Thesis

Degree Name

Master of Science

Department

Electrical Engineering

First Advisor

Dr. Hadis Morkoc

Abstract

Described in this thesis are the growth and characterization of high quality ZnO epitaxy layers.Zinc oxide (ZnO) epitaxy layers were grown on sapphire and epi-GaN substrates respectively, using plasma assisted molecular beam epitaxy (MBE) . Various growth conditions, such as growth temperature, II/VI ratio, and buffer layers, were employed to optimize the quality of the ZnO film. The subsequent characterization of the films was carried out to evaluate the surface, optical and crystalline properties of the film, using AFM, SEM, PL and XRD techniques. It was found out that the high quality of the ZnO film was grown on epi-GaN substrates under the Low temperature of ~ 300 degrees C, flash annealing up to ~680 degrees C, followed by high temperature growth at ~600 degrees C.

Rights

© The Author

Is Part Of

VCU University Archives

Is Part Of

VCU Theses and Dissertations

Date of Submission

June 2008

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