Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork

Authors

J. Xie, Virginia Commonwealth UniversityFollow
Ü. Özgür, Virginia Commonwealth UniversityFollow
Y. Fu, Virginia Commonwealth University
X. Ni, Virginia Commonwealth UniversityFollow
Hadis Morkoç, Virginia Commonwealth UniversityFollow
C. K. Inoki, University at Albany, State University of New York
T. S. Kuan, University at Albany, State University of New York
J. V. Foreman, Duke University
H. O. Everitt, Duke University

Document Type

Article

Original Publication Date

2007

Journal/Book/Conference Title

Applied Physics Letters

Volume

90

Issue

4

DOI of Original Publication

10.1063/1.2433754

Comments

Originally published at http://dx.doi.org/10.1063/1.2433754

Date of Submission

April 2015

Abstract

Significant improvement of structural and optical qualities of GaNthin films on sapphire substrates was achieved by metal organic chemical vapor deposition with in situ SiNxnanonetwork. Transmission electron microscope (TEM) studies revealed that screw- and edge-type dislocations were reduced to 4.4×107 and 1.7×107cm−2, respectively, for a ∼5.5-μm-thick layer. Furthermore, room temperature carrier lifetimes of 2.22 and 2.49ns were measured by time-resolved photoluminescence(TRPL) for samples containing single and double SiNx network layers, respectively, representing a significant improvement over the previous studies. The consistent trends among the TEM,x-ray diffraction, and TRPL measurements suggest that in situ SiNx network reduces line defects effectively as well as the point-defect-related nonradiative centers.

Rights

Xie, J., Özgür, Ü., Fu, Y., et al. Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork. Applied Physics Letters, 90, 041107 (2007). Copyright © 2007 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications