Document Type
Article
Original Publication Date
2006
Journal/Book/Conference Title
Applied Physics Letters
Volume
89
Issue
26
DOI of Original Publication
dx.doi.org/10.1063/1.2424677
Date of Submission
April 2015
Abstract
Epitaxial lateral overgrowth (ELO) was employed for both c-plane and a-plane GaN layers on sapphire, and a more pronounced optical improvement was observed for the a-plane GaN as evidenced by the significantly increased band edge photoluminescence(PL). Room temperature near-field scanning optical microscopy studies explicitly showed enhanced optical quality in the wing regions of the overgrown GaN due to reduced density of dislocations, and for the a-plane ELOGaN sample the wings and the windows were clearly discernible from PL mapping. Time-resolved PLmeasurements revealed biexponential decays with time constants that were significantly enhanced for the a-plane ELOGaN (τ1=0.08ns, τ2=0.25ns) when compared to the non-ELO control sample but were still much shorter than those for the c-plane ELOGaN (τ1=0.26ns, τ2=0.90ns).
Rights
Özgür, Ü., Ni, X., Fu, Y., et al. Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN. Applied Physics Letters, 89, 262117 (2006). Copyright © 2006 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.2424677