Document Type
Article
Original Publication Date
2005
Journal/Book/Conference Title
Applied Physics Letters
Volume
87
Issue
7
DOI of Original Publication
10.1063/1.2031930
Date of Submission
April 2015
Abstract
GaN epilayers grown by organometallic vapor phase epitaxy have been used to fabricate resistivegas sensors with a pair of planar ohmic contacts. Detectible sensitivity to H2 gas for a wide range of gas mixtures in an Ar ambient has been realized; the lowest concentration tested is ∼0.1% H2 (in Ar), well below the lower combustion limit in air. No saturation of the signal is observed up to 100% H2 flow. Real-time response to H2 shows a clear and sharp response with no memory effects during the ramping cycles of H2 concentration. The change in current at a fixed voltage to hydrogen was found to change with sensor geometry. This appears to be consistent with a surface-adsorption-induced change of conductivity; a detailed picture of the gas sensing mechanism requires further systematic studies.
Rights
Yun, F., Chevtchenko, S., Moon, Y.-T., et al. GaN resistive hydrogen gas sensors. Applied Physics Letters, 87, 073507 (2005). Copyright © 2005 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.2031930