Document Type

Article

Original Publication Date

2005

Journal/Book/Conference Title

Journal of Applied Physics

Volume

98

Issue

12

DOI of Original Publication

10.1063/1.2142074

Comments

Originally published at http://dx.doi.org/10.1063/1.2142074

Date of Submission

October 2015

Abstract

We report on the growth of and evolution of defects in GaN epilayers having single- and double-layer SiNx nanoporous insertion layers. The SiNx was formed in situ in the growth chamber of an organometallic vapor-phase epitaxy system by simultaneous flow of diluted silane and ammonia. The GaN epilayers and SiNx interlayers were grown on 6H-SiC substrates using three different nucleation layers, namely, low-temperature GaN, high-temperature GaN, and high-temperature AlN nucleation layers. X-ray-diffraction rocking curves and cross-sectional and plan-view transmission electron microscope analyses indicated that a nanoporous SiNx layer can reduce the dislocations density in the GaN overgrown layer to ∼3×108cm−2 range; below this level the defect blocking effect of SiNx would saturate. Therefore the insertion of a second SiNx layer becomes much less effective in reducing dislocations, although it continues to reduce the point defects, as suggested by time-resolved photoluminescence measurements. The insertion of SiNx interlayers was found to improve significantly the mechanical strength of the GaN epilayers resulting in a much lower crack line density.

Rights

Yun, F., Moon, Y. T., Fu, Y., et al. Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy. Journal of Applied Physics 98, 123502 (2005). Copyright © 2005 AIP Publishing LLC.

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VCU Electrical and Computer Engineering Publications

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