Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Improved structural quality and radiative efficiency were observed in GaNthin filmsgrown by metalorganic chemical vapor deposition on TiN porous network templates formed by in situthermal annealing of Ti in ammonia. The room-temperature decay times obtained from biexponential fits to time-resolved photoluminescence data are longer than ever reported for GaN. The carrier lifetime of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200 μm thick high-quality freestanding GaN. The linewidth of the asymmetric x-ray diffraction(XRD)(101¯2) peak decreases considerably with the use of TiN layer and with increasing in situannealing time, indicating the reduction in threading dislocation density. However, no direct correlation is yet found between the decay times and the XRD linewidths, suggesting that point defect and impurity related nonradiative centers are the main parameters affecting the lifetime.
Özgür, U., Fu, Y., Moon, Y.T., et al. Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates. Applied Physics Letters, 86, 232106 (2005). Copyright © 2005 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications