Document Type
Article
Original Publication Date
2005
Journal/Book/Conference Title
Journal of Applied Physics
Volume
97
Issue
10
DOI of Original Publication
10.1063/1.1894583
Date of Submission
October 2015
Abstract
Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on SiN and TiN porous network templates. The room-temperature decay times obtained from biexponential fits to time-resolved photoluminescence data are increased with the inclusion of SiN and TiN layers. The carrier lifetime of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200μm-thick high-quality freestanding GaN. The linewidth of the asymmetric x-ray diffraction (XRD) (101¯2) peak decreases considerably with the use of SiN and TiN layers, indicating the reduction in threading dislocation density. However, no direct correlation is yet found between the decay times and the XRD line widths, suggesting that point defect and impurity-related nonradiative centers are the main parameters affecting the lifetime.
Rights
Ozgur, U., Fu, Y., Moon, Y. T., et al. Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers. Journal of Applied Physics 97, 103704 (2005). Copyright © 2005 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1894583